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MRF8HP21130HR3 mrf8hp21130hsr3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for w--cdma and lte base station applications with frequencies from 2110 to 2170 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical doherty single--carrier w--cdma performance: v dd =28volts, i dqb = 360 ma, v gsa =0.4vdc,p out = 28 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 2110 mhz 14.2 46.4 7.9 --35.4 2140 mhz 14.1 45.7 7.7 --35.3 2170 mhz 14.0 45.1 7.6 --34.8 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 157 watts cw (1) output power (3 db input overdrive from rated p out ) ? typical p out @ 3 db compression point ? 166 watts cw (1) features ? advanced high performance in--package doherty ? production tested in a doherty configuration ? 100% par tested for guaranteed output power capability ? characterized with large--signal load--pull parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? rohs compliant ? ni--780--4 in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 8. ? ni--780s--4 in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 8. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (2,3) t j 225 c cw operation @ t c =25 c derate above 25 c cw 118 0.28 w w/ c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. document number: mrf8hp21130h rev. 0, 4/2011 freescale semiconductor technical data 2110--2170 mhz, 28 w avg., 28 v w--cdma, lte lateral n--channel rf power mosfets MRF8HP21130HR3 mrf8hp21130hsr3 case 465h--02, style 1 ni--780s--4 mrf8hp21130hsr3 case 465m--01, style 1 n i -- 7 8 0 -- 4 MRF8HP21130HR3 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb carrier peaking ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 81 c, 28 w cw, 28 vdc, i dqb = 360 ma, v gsa = 0.4 vdc, 2170 mhz case temperature 105 c, 110 w cw (3) ,28vdc,i dqb = 360 ma, v gsa = 0.4 vdc, 2170 mhz r jc 0.60 0.50 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c (minimum) machine model (per eia/jesd22--a115) b (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics -- side a (4) gate threshold voltage (v ds =10vdc,i d = 102 adc) v gs(th) 0.1 0.9 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.02adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b (4) gate threshold voltage (v ds =10vdc,i d =75 adc) v gs(th) 1.2 1.8 2.7 vdc gate quiescent voltage (v dd =28vdc,i db = 360 ma, measured in functional test) v gs(q) 1.9 2.6 3.4 vdc drain--source on--voltage (v gs =10vdc,i d =0.75adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (5,6) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqb = 360 ma, v gsa =0.4vdc, p out = 28 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 13.0 14.0 16.0 db drain efficiency d 42.0 45.1 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.7 7.6 ? db adjacent channel power ratio acpr ? --34.8 --30.0 dbc typical broadband performance (6) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqb = 360 ma, v gsa =0.4vdc,p out = 28 w avg., single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) 2110 mhz 14.2 46.4 7.9 --35.4 2140 mhz 14.1 45.7 7.7 --35.3 2170 mhz 14.0 45.1 7.6 --34.8 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 3. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 4. each side of device measured separately. 5. part internally matched both on input and output. 6. measurement made with device in a d oherty configuration. (continued)
MRF8HP21130HR3 mrf8hp21130hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (1) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqb = 360 ma, v gsa =0.4vdc, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 130 (2) ? w p out @ 3 db compression point, cw p3db ? 166 (2) ? w imd symmetry @ 52 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 18 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 50 ? mhz gain flatness in 60 mhz bandwidth @ p out =28wavg. g f ? 0.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.011 ? db/ c output power variation over temperature (--30 cto+85 c) (2) ? p1db ? 0.012 ? db/ c 1. measurement made with device in a doherty configuration. 2. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3 figure 2. MRF8HP21130HR3(hsr3) test circuit component layout mrf8hp21130 rev. 1 c1 c2 c3 r1 c4 z1 c5 c6 r2 r3 c7 r4 c8 c9 c10 c19 c20 c22 c18 c17 c16 c14 c15 c14 c13 c11 c12 c21 cut out area p c table 5. MRF8HP21130HR3(hsr3) test circuit component designations and values part description part number manufacturer c1, c2, c9, c10, c11, c12, c19, c20 10 f chip capacitors grm55dr61h106ka88l murata c3, c4, c5, c8, c13, c15, c16, c18 15 pf chip capacitors atc600f150jt250xt atc c6 1.2 pf chip capacitor atc600f1r2bt250xt atc c7 0.5 pf chip capacitor atc600f0r5bt250xt atc c14 0.7 pf chip capacitor atc600f0r7bt250xt atc c17 1 pf chip capacitor atc600f1r0bt250xt atc c21, c22 220 f, 50 v electrolytic capacitors emvy500ada221mja0g united chemi--con r2, r3 100 ? , 1/4 w chip resistors crcw1206100rfkea vishay r1, r4 10 ? , 1/4 w chip resistors crcw120610r0jnea vishay z1 2000--2300 mhz band 90 , 3 db hybrid coupler x3c21p1--03s anaren pcb 0.020 , r =3.5 r04350 rogers
MRF8HP21130HR3 mrf8hp21130hsr3 5 rf device data freescale semiconductor typical characteristics parc (db) 2060 g ps acpr f, frequency (mhz) figure 3. output peak--to--average ratio compression (parc) broadband performance @ p out = 28 watts avg. -- 2 . 8 -- 2 -- 2 . 2 -- 2 . 4 -- 2 . 6 12.8 14.8 14.6 14.4 -- 3 7 48 47 46 45 -- 3 2 -- 3 3 -- 3 4 -- 3 5 d , drain efficiency (%) d g ps , power gain (db) 14.2 14 13.8 13.6 13.4 13.2 13 2080 2100 2120 2140 2160 2180 2200 2220 44 -- 3 6 -- 3 acpr (dbc) parc figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 52 w (pep), i dqb = 360 ma v gsa = 0.4 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz figure 5. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 20 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 30 40 60 0 60 50 40 30 20 10 d , drain efficiency (%) -- 3 d b = 3 4 w 50 d acpr parc acpr (dbc) -- 4 5 -- 1 5 -- 2 0 -- 2 5 -- 3 5 -- 3 0 -- 4 0 15 g ps , power gain (db) 14.5 14 13.5 13 12.5 12 g ps v dd =28vdc,i dqb = 360 ma, v gsa =0.4vdc f = 2140 mhz, single--carrier w--cdma input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out =28w(avg.),i dqb = 360 ma, v gsa =0.4vdc 2--carrier w--cdma, 3.84 mhz channel bandwidth 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf -- 2 d b = 2 6 w -- 1 d b = 1 7 w
6 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 6 18 0 60 50 40 30 20 d , drain efficiency (%) d g ps , power gain (db) 16 14 10 100 150 10 -- 6 0 acpr (dbc) 12 10 8 0 -- 3 0 -- 4 0 -- 5 0 2110 mhz 2170 mhz 2140 mhz figure 7. broadband frequency response 0 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqb = 360 ma v gsa =0.4vdc 12 9 6 gain (db) 15 3 1800 1875 1950 2025 2100 2175 2250 2325 2400 v dd =28vdc,i dqb = 360 ma, v gsa =0.4vdc single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf 2110 mhz 2140 mhz 2170 mhz w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 8. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 9. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0
MRF8HP21130HR3 mrf8hp21130hsr3 7 rf device data freescale semiconductor v dd =28vdc,i dqb = 360 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 2110 6.20 -- j10.7 3.40 -- j6.70 48.4 69 55.3 49.2 83 56.1 2140 7.80 -- j11.5 3.40 -- j6.80 48.4 69 55.5 49.2 83 55.3 2170 9.20 -- j12.2 3.00 -- j7.24 48.4 69 52.5 49.2 83 53.3 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 10. carrier side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd =28vdc,i dqb = 360 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 2110 6.20 -- j10.7 7.60 -- j6.30 46.8 48 63.5 48.0 63 64.1 2140 7.80 -- j11.5 7.71 -- j5.50 46.6 46 63.5 47.8 60 63.9 2170 9.20 -- j12.2 6.40 -- j5.60 47.0 50 62.3 47.8 60 62.5 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 11. carrier side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner
8 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3 v dd =28vdc,v gsa = 0.4 vdc, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 2110 3.10 -- j7.30 5.40 + j0.50 51.4 138 55.8 52.2 166 56.9 2140 3.77 -- j7.80 5.00 + j1.80 51.2 132 54.4 52.0 158 56.7 2170 4.30 -- j8.50 4.30 + j1.50 51.2 132 54.1 52.0 158 55.2 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 12. peaking side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd =28vdc,v gsa = 0.4 vdc, pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 2110 3.10 -- j7.30 4.80 -- j5.20 49.1 81 67.2 51.0 126 68.2 2140 3.77 -- j7.80 6.50 -- j4.80 49.0 79 66.6 49.9 98 67.5 2170 4.30 -- j8.50 6.90 -- j4.90 48.8 76 66.7 49.9 98 67.4 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 13. peaking side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner
MRF8HP21130HR3 mrf8hp21130hsr3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3
MRF8HP21130HR3 mrf8hp21130hsr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3
MRF8HP21130HR3 mrf8hp21130hsr3 13 rf device data freescale semiconductor product documentation and software refer to the following documents and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for mrf8hp21130h and mrf8hp21130hs parts will be available for 2 years after release of mrf8hp21130h and mrf8hp21130hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered mrf8hp21130h and mrf8hp21130hs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2011 ? initial release of data sheet
14 rf device data freescale semiconductor MRF8HP21130HR3 mrf8hp21130hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8hp21130h rev. 0, 4/2011

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